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III–V epitaxy · Space photovoltaics · Xiamen

Power that
survives the orbit

Wafertop grows, processes and assembles triple-junction GaAs solar cells — 30 to 32% BOL efficiency, qualified to GJB 7392-2011, built at up to a million epitaxial wafers a year.

32% peak BOL efficiency
4080 CIC
1,000,000 Epi wafers / year
4-inch equivalent
13× Aixtron MOCVD
2800 G4
25+ Years of epitaxy
on the founding team
The problem

An array is decided
before the first cell ships

Four things determine whether a photovoltaic programme holds its schedule and its power budget. None of them is a cell-level specification — they are supply-chain properties.

01

Fragmented supply

Epitaxy, chip processing and CIC assembly usually come from three different suppliers. Every interface is a separate qualification and a separate schedule risk.

02

Batch-to-batch drift

Efficiency spread across lots does not stay at cell level — it becomes array-level power loss, discovered late at panel integration.

03

Radiation margin

End-of-life power sizes the array, not beginning-of-life. Without published 1 MeV degradation data, that margin is guesswork.

04

Volume, not samples

A constellation needs tens of thousands of cells on a repeatable schedule. Qualification lots are not a capacity plan.

Quick facts

Six numbers that describe the plant behind the datasheet.

01

Efficiency

Lattice-matched AlGaInP/InGaAs/Ge triple junction, in mass production — not a laboratory result.

30 – 32% BOL
02

Epitaxy capacity

800,000 to 1,000,000 four-inch-equivalent wafers a year across thirteen Aixtron MOCVD 2800 G4 reactors, supplemented by leased tools.

1,000,000 wafers
03

Chip capacity

A complete in-house solar-cell line — 200,000 to 240,000 chips a year: lithography, etching, coating, thinning, dicing and test.

240,000 chips
04

Wafer sizes

Ge substrates in 4-inch and 6-inch, with 6 µm epitaxial layers and EPD below 300/cm².

4" & 6"
05

Heritage

Founding team with programmes for the Chinese Space Station, lunar rovers and satellite power systems.

25+ years
06

Qualification

Every space cell type in this catalogue is fully qualified to the national space standard.

GJB 7392-2011
Product portfolio

One chain, from epi
to assembled cell

We are the single supplier for the three steps that usually take three vendors — which is the answer to problem 01 above.

Triple-junction GaAs space solar cell, bare die with gold contact fingers
Rigid · 30–32% class

Triple-junction cells & CIC assemblies

Lattice-matched AlGaInP/InGaAs/Ge on Ge, delivered bare or as a finished CIC — 4080 or 14468 — with coverglass, interconnectors and bypass diode.

Efficiency
30 – 32% BOL
Cell area
30.2 – 79.8 cm²
Standard
GJB 7392-2011
Specifications
Thin-film flexible GaAs solar cell bent into a shallow arc
Flexible · 30.5–31.5% class

Thin-film flexible cells

AlGaInP/GaAs/InGaAs lifted off the growth wafer — 31.5% on polyimide, 30.5% on metal substrate — for platforms where specific power sets the mission.

Efficiency
30.5 – 31.5% BOL
Specific mass
20 – 28 mg/cm²
Thickness
30 – 75 µm
Specifications
Six-inch GaAs epitaxial wafer, mirror-polished surface
Epi · 30% class

Solar cell epitaxial wafers

4-inch and 6-inch Ge-based wafers for customers running their own cell process, or needing a custom design on a qualified stack.

Efficiency
30.8% BOL
Substrate
Ge, 4" / 6"
EPD
< 300 /cm²
Specifications

Assembly components — coated coverglass (Tave ≥ 93.5%), Si bypass diodes and space-grade interconnectors — are supplied with the cell or separately. See components →

Product imagery is derived from photographs of our own hardware and restaged for presentation. Minor visual detail may differ from delivered parts — the tabulated dimensions and electrical data are the binding reference.

Key technology

Three properties decide what a cell delivers at end of life — not what it measures on the flash tester at beginning of life.

  • 01
    Lattice-matched triple junction

    GaInP / GaAs / Ge sub-cells joined by tunnel junctions, each absorbing a different band of the spectrum — grown in-house on our own MOCVD reactors.

  • 02
    Published radiation margin

    1 MeV electron degradation and temperature coefficients are part of the datasheet, so end-of-life power can be calculated rather than assumed.

  • 03
    Thin-film lift-off

    Flexible cells at 30 µm and 28 mg/cm² — the same epitaxy, released from the growth substrate onto metal foil.

GaInP / GaAs / Ge triple-junction epitaxial layer structure
Triple-junction epitaxial stack — window, emitter, base, tunnel junction and buffer layers. Layer thickness illustrative, not to scale.

Applications

From GEO telecom platforms to CubeSat deployables and high-altitude aircraft — the same epitaxy, tuned to the radiation and mass budget of each mission.

LEO constellations

Constellation satellites

Repeatable batch performance and volume pricing for large flat-panel arrays.

GEO & science

Telecom & exploration

Radiation-hard triple-junction cells for 15-year GEO missions and deep-space probes.

Mass-critical

CubeSats & smallsats

30 µm flexible cells at 28 mg/cm² for deployable and body-mounted arrays.

Atmosphere

HAPS & UAV

Lightweight thin-film cells for high-altitude pseudo-satellites and long-endurance aircraft.

Company

Built in Xiamen,
qualified in orbit

Founded in 2021 and headquartered in Xiamen, Wafertop is a national high-tech enterprise focused on III–V compound semiconductor epitaxy, chip R&D and industrialisation. We hold ISO 9001 certification, and our cells are exported to customers across multiple countries and regions.

Beyond photovoltaics, the same MOCVD platform produces 940 nm VCSEL epitaxial wafers, edge-emitting lasers and InGaAs PIN/APD detector wafers.

Discuss a requirement

External quantum efficiency of the three sub-cells
External quantum efficiency per sub-cell — measured peaks 95.6% / 95.8% / 89.4%, with absorption edges at 668.8 / 933.8 / 1593.7 nm.

Send us your array requirements

Cell size, orbit, radiation dose and annual quantity — we will come back with a specification and a price.

Request a quote
Wafer to Watt to Orbit