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Space solar cells,
assemblies and epi wafers

Every figure below is taken from the current published datasheet. Electrical data is measured at AM0, 1 sun, 1353 W/m², 25 °C unless stated otherwise.

30 – 32% class · Two grades, three models

Triple-junction GaAs solar cell assemblies

AlGaInP/InGaAs/Ge on Ge substrate, supplied as a finished CIC with external silicon bypass diode, interconnectors and coverglass. One stack, one qualification, offered in a 32% grade and a 30% grade, in 80 × 40 mm and 144 × 68 mm formats.

N32TBLBAP · N30TBLBA
4080 CIC solar cell assembly with coverglass and interconnectors
Model comparison — AM0, 1 sun, 1353 W/m², 25 °C
Parameter 4080CIC-
N32TBLBAP		 4080CIC-
N30TBLBA		 14468CIC-
N30TBLBA
Efficiency class32%30%30%
Average η (%)3230.530.5
Voc (mV)277527502750
Jsc (mA/cm²)1817.617.6
Vm (mV)245024302430
Jm (mA/cm²)17.51717
Dimensions (mm)80.15 × 40.1580.15 × 40.15144.45 × 68.65
Cell area (cm²)30.1530.1579.8
Weight (mg/cm²)120 ± 15120 ± 15165 ± 15
Thickness (µm)360 ± 30360 ± 30440 ± 30
ILavg @ 2300 mV (mA)5155001345
Pm/Pm0 @ 1E150.860.8550.855

The two 4080 grades are mechanically identical — same footprint, same 30.15 cm² area, same 120 mg/cm² mass — so a programme can change efficiency grade without re-qualifying its array interface. One 14468 covers 2.6× the area of one 4080 at the same current density, which cuts the cell, interconnect and weld count per square metre by roughly 62%.

32% grade 4080CIC-N32TBLBAP
  • Fully qualified according to GJB 7392-2011
  • 32% BOL efficiency in batch production
  • Custom sizes available
Design & mechanical data
Base materialAlGaInP/InGaAs/Ge on Ge substrate
AR coatingTiOx/Al2O3
Dimensions(80.15 ± 0.1) × (40.15 ± 0.1) mm
Cell area30.15 cm²
Weight120 ± 15 mg/cm²
Thickness (without contacts)360 ± 30 µm
Coverglass thickness120 ± 20 µm
InterconnectorsKovar, silver coated
Interconnector thickness25 µm
Bypass protectionExternal Si diode
Electrical data — AM0, 1 sun, 1353 W/m², 25 °C
Average open-circuit voltage Voc2775 mV
Average short-circuit current Jsc18 mA/cm²
Average voltage at max. power Vm2450 mV
Average current at max. power Jm17.5 mA/cm²
Average efficiency η32 %
Radiation degradation — 1 MeV e⁻, normalised
Parameter1E143E141E15
Im/Im00.990.980.94
Vm/Vm00.940.920.91
Pm/Pm00.940.910.86
Acceptance values
Voltage VL2300 mV
Min. average current ILavg @ VL515 mA
Min. individual current ILmin @ VL495 mA
Temperature gradients
ParameterBOL1E15
Jsc (µA/cm²/°C)10.012.7
Voc (mV/°C)−6.1−6.5
Jm (µA/cm²/°C)9.215.2
Vm (mV/°C)−6.2−6.8
Threshold values
Absorptivity≤ 0.92
Pull test (at 45°)≥ 0.83 N/mm²
StatusQualified
Typical AM0 light I-V characteristic of a triple-junction GaAs solar cell
Typical light I-V characteristic at AM0, 1 sun, 1353 W/m², 25 °C.
30% grade 4080CIC-N30TBLBA · 14468CIC-N30TBLBA
  • Fully qualified according to GJB 7392-2011
  • 30% BOL efficiency in batch production
  • Same assembly BOM as the 32% grade — coverglass, Kovar interconnectors, external Si diode
Format & acceptance — by model
Parameter408014468
Dimensions (mm)80.15 × 40.15144.45 × 68.65
Cell area (cm²)30.1579.8
Weight (mg/cm²)120 ± 15165 ± 15
Thickness (mm)0.360 ± 0.0300.440 ± 0.030
Voltage VL (mV)23002300
ILavg @ VL (mA)5001345
ILmin @ VL (mA)4801333
Shared construction
Base materialAlGaInP/InGaAs/Ge on Ge substrate
AR coatingTiOx/Al2O3
Coverglass thickness120 ± 20 µm
InterconnectorsKovar, silver coated, 25 µm
Bypass protectionExternal Si diode
Radiation degradation — 1 MeV e⁻, normalised
Parameter1E143E141E15
Im/Im00.990.980.94
Vm/Vm00.940.930.91
Pm/Pm00.930.910.855
Temperature gradients — by model
Parameter408014468
Jsc, BOL (µA/cm²/°C)9.911.1
Jsc, 1E1512.813.1
Voc, BOL (mV/°C)−6.0−6.0
Voc, 1E15−6.4−6.7
Jm, BOL (µA/cm²/°C)9.19.1
Jm, 1E1515.115.1
Vm, BOL (mV/°C)−6.1−6.2
Vm, 1E15−6.6−6.6
Threshold values
Absorptivity≤ 0.92
Pull test (at 45°)≥ 0.83 N/mm²
StatusQualified

Radiation data above applies to both 30% formats. Datasheets state the efficiency class as 30% while the electrical table lists 30.5% average η for batch production — we quote both rather than reconcile them. Full PDFs on request.

31% grade · Large area, bare cell

Triple-junction GaAs solar cell

Large-area GaInP/InGaAs/Ge cell on Ge substrate for high-power rigid arrays, supplied as a bare cell with a three-pad grid.

NCA30T077AB
Bare triple-junction GaAs solar cell with gold contact fingers
  • Fully qualified according to GJB 7392-2011
  • 31% BOL efficiency in batch production
  • Custom sizes available
Design & mechanical data
Base materialGaInP/InGaAs/Ge on Ge substrate
AR coatingTiOx/Al2O3
Dimensions(144.6 ± 0.1) × (66.5 ± 0.1) mm
Cell area77.26 cm²
Weight80 ± 10 mg/cm²
Thickness (without contacts)0.155 ± 0.025 mm
Contact metallisation (Ag/Au)4 – 7 µm
Grid designGrid system with 3 contact pads
Electrical data — AM0, 1 sun, 1353 W/m², 25 °C
Average open-circuit voltage Voc2780 mV
Average short-circuit current Jsc17.8 mA/cm²
Average voltage at max. power Vm2450 mV
Average current at max. power Jm17.2 mA/cm²
Average efficiency η31 %
Radiation degradation — 1 MeV e⁻, normalised
Parameter1E143E141E15
Im/Im00.990.980.94
Vm/Vm00.940.930.91
Pm/Pm00.930.910.855
Acceptance values
Voltage VL2300 mV
Min. average current ILavg @ VL1345 mA
Min. individual current ILmin @ VL1333 mA
Temperature gradients
ParameterBOL1E15
Jsc (µA/cm²/°C)11.113.1
Voc (mV/°C)−6.0−6.7
Jm (µA/cm²/°C)9.115.1
Vm (mV/°C)−6.2−6.6
Threshold values
Absorptivity≤ 0.92
Pull test (at 45°)≥ 0.83 N/mm²
StatusQualified

This is the bare cell — no coverglass, no interconnectors — for customers who assemble their own CIC. The 14468CIC-N30TBLBA above is a comparable large-area cell supplied as a finished assembly. Datasheet efficiency class 30%; 31% average BOL efficiency is stated for batch production in the current datasheet (2025.12). Contact us for the full PDF.

30.5 – 31.5% class · Two substrates

Triple-junction flexible GaAs solar cell

AlGaInP/GaAs/InGaAs lifted off the growth wafer. The 31.5% build sits on a 75 µm polyimide carrier; the 30.5% build on a 30 µm metal substrate. Both share the 80 × 40 mm footprint and the same eight-pad grid, so the choice between them is electrical, not mechanical.

RPM31T030AB · 30.5% build
Thin-film flexible GaAs solar cell bent into a shallow arc
Model comparison — AM0, 1 sun, 1353 W/m², 25 °C
Parameter RPM31T030AB
31.5% class		 Metal substrate
30.5% class
Efficiency class31.5%30.5%
Average η (%)31.830.5
Voc (mV)30003050
Jsc (mA/cm²)16.816.2
Vm (mV)26552700
Jm (mA/cm²)16.215.6
SubstratePolyimide (PI)Metal
Dimensions (mm)80.0 × 40.080.0 × 40.0
Cell area (cm²)30.1529.4
Thickness (mm)0.075 ± 0.020.030 ± 0.01
Weight (mg/cm²)20 ± 528 ± 5
Contact metallisationAg/Au, 4 – 7 µmAg/Au, 4 – 7 µm
Pm/Pm0 @ 1E150.8250.85

The 31.5% build trades radiation hardness for beginning-of-life power: at 1E15 e/cm² it retains 82.5% of its power against 85% for the metal build, but starts 1.3 points higher. On a low-fluence mission the PI build wins outright; in a harsh orbit the metal build closes the gap.

Both builds degradation, temperature and qualification
  • Fully qualified according to GJB 7392-2011
  • Flexible, lightweight, custom sizes available
  • Eight-pad grid on both builds; Ag/Au contacts 4 – 7 µm
Radiation degradation — 1 MeV e⁻, normalised
Parameter31.5% · PI30.5% · metal
Im/Im0 @ 1E140.990.98
Im/Im0 @ 3E140.960.97
Im/Im0 @ 1E150.930.93
Vm/Vm0 @ 1E140.940.94
Vm/Vm0 @ 3E140.920.93
Vm/Vm0 @ 1E150.890.91
Pm/Pm0 @ 1E140.940.92
Pm/Pm0 @ 3E140.880.90
Pm/Pm0 @ 1E150.8250.85
Temperature gradients — identical for both builds
ParameterBOL1E15
Jsc (µA/cm²/°C)9.513.7
Voc (mV/°C)−6.22−6.8
Jm (µA/cm²/°C)9.013.0
Vm (mV/°C)−6.2−7.1
Threshold values
Absorptivity≤ 0.92
Pull test (at 45°)≥ 0.83 N/mm²
StatusQualified
Notes on the published figures
Datasheet efficiency class31.5% stated, 31.8% in the electrical table
30.5% build substrateMetal; datasheet gives 28 ± 5 mg/cm² at 0.030 mm
30% class · Wafer level

Triple-junction solar cell epitaxial wafers

Ge-based epi wafers in 4-inch and 6-inch, for customers who run their own cell processing or need a custom cell design on a standard stack.

WT-4CA30NT / WT-6CG30NT
Six-inch GaAs epitaxial wafer with mirror-polished surface
  • 30.8% BOL efficiency at wafer level in batch production
  • Suitable for any further processing and custom cell designs
  • 4-inch and 6-inch epitaxial wafers available
Design & mechanical data
Substrate typeGe
Substrate thickness — 4"140 ± 10 µm
Substrate thickness — 6"225 ± 15 µm
Epitaxial layer thickness6 µm
Substrate size — 4"100.0 ± 0.25 mm
Substrate size — 6"150.0 ± 0.25 mm
Etch pit density (EPD)< 300 /cm²
Photoelectric performance — AM0, 1 sun, 1353 W/m², 25 °C
ParameterBOL1E143E141E15
Voc (mV)2750259625402497
Jsc (mA/cm²)17.617.517.216.9
Fill factor FF (%)86.085.885.284.5
Conversion efficiency (%)30.828.927.526.4
External quantum efficiency of top, middle and bottom sub-cells
External quantum efficiency per sub-cell — peaks 95.6% / 95.8% / 89.4%, absorption edges at 668.8 / 933.8 / 1593.7 nm.
GaInP/GaAs/Ge triple-junction epitaxial layer structure
Epitaxial structure — window, emitter, base, tunnel junction and buffer layers. Thickness illustrative.
Assembly components

Coverglass, bypass diodes and interconnectors

Supplied together with our cells, or separately for customers assembling their own CICs.

Coverglass · diode · interconnect
Coated coverglass, interconnector strip and silicon bypass diode
Coated glass cover sheet
Dimensions40.15 × 80.15 × 0.12 mm
Tave 400–1100 nm≥ 93.5%
Transmittance @ 400 nm≥ 90.5%
Transmittance @ 700 nm≥ 94%
Transmittance @ 1100 nm≥ 93.5%
EnvironmentalRoHS and halogen-free
Coating adhesion15 min boil + 3× CT-18 tape pull, no peel
Appearance requirements
Dot defects≤ 40 µm, max. 10 pcs, spacing ≥ 100 µm
ScratchesNot allowed
Edge chippingRadial width ≤ 0.1 mm, no cracking
CleanlinessRemovable dust < 3%, no stains or fingerprints
Coating colourConsistent, unchanged after cleaning
Bypass diodes & interconnectors
Bypass protectionExternal Si diode, one per CIC
Interconnector materialKovar, silver coated
Interconnector thickness25 µm
Pull test (at 45°)≥ 0.83 N/mm²

Coverglass dimension and coating figures are from our internal specification sheet; the space interconnector and bypass diode lines are supplied as part of every CIC assembly — 4080 and 14468, both grades. Contact us for component-level datasheets.

Product imagery is derived from photographs of our own hardware and restaged for presentation. Minor visual detail may differ from delivered parts — the tables are the binding reference for dimensions, electrical performance and qualification.

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